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www.irf.com 1 irfbe30spbf IRFBE30LPBF o dynamic dv/dt rating o repetitive avalanche rated o fast switching o ease of paralleling o simple drive requirements o lead-free pd - 95507 description third generation hexfets from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. d 2 pak irfbe30s to-262 irfbe30l hexfet ? power mosfet s d g v dss = 800v r ds(on) = 3.0 ? i d = 4.1a absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter min. typ. max. units r jc junction-to-case ??? ??? 1.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient ??? ??? 62 10 lbfin (1.1nm) 125 1.0 20 13 260 4.1 300 (1.6mm from case ) -55 to + 150 2.0 max. 4.1 2.6 16

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). v dd =50v, starting t j = 25c, l=29mh, r g =25 ? , i as = 4.1a. (see figure 12). i sd 4.1a, di/dt 100a/s, v dd 600, t j 150c. pulse width 300s; duty cycle 2%. s d g s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 800 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.90 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 3.0 ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 2.5 ??? ??? s i dss drain-to-source leakage current ??? ??? 100 a ??? ??? 500 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? ??? 78 nc q gs gate-to-source charge ??? ??? 9.6 q gd gate-to-drain ("miller") charge ??? ??? 45 t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 33 ??? ns t d(off) turn-off delay time ??? 82 ??? t f fall time ??? 30 ??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1300 ??? c oss output capacitance ??? 310 ??? pf c rss reverse transfer capacitance ??? 190 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 4.1 (body diode) a i sm pulsed source current ??? ??? 16 (body diode) v sd diode forward voltage ??? ??? 1.8 v t rr reverse recovery time ??? 480 720 ns q rr reverse recovery charge ??? 1.8 2.7 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 2.5a v ds = v gs , i d = 250a v ds = 800v, v gs = 0v v ds = 640v, v gs = 0v, t j = 125c r g = 12 ? i d = 4.1a v ds = 100v, i d = 2.5a v dd = 400v i d = 4.1a v gs = 20v v gs = -20v t j = 25c, i f = 4.1a di/dt = 100a/s t j = 25c, i s = 4.1a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v gs = 0v v ds = 25v conditions v ds = 400v v gs = 10v, see fig. 6 & 13 ? = 1.0mhz, see fig. 5 r d = 95 ?, see fig. 10

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www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ?
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dimensions are shown in millimeters (inches) note: "p" in as s embly line pos i ti on i ndi cates "l ead-f r ee" f 530s t his is an irf 530s wit h lot code 8024 as s emb led on ww 02, 2000 in the assembly line "l" as s e mb l y lot code international rectifier logo part numb e r dat e code ye ar 0 = 2000 we e k 02 line l f530s a = assembly site code we e k 0 2 p = designate s lead-fre e product (optional) rect ifier international logo lot code as s e mb l y ye ar 0 = 2000 dat e code part number

www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rectifier int ernat ional as s e mbl e d on ww 19, 1997 note: "p" in as s embly line pos i ti on i ndi cates "l ead- f r ee" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly int ernat ional rectifier product (optional) p = designates lead-free a = assembly site code week 19 ye ar 7 = 1997 date code or

10 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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